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DS2001IBDG1A GE Insulated Gate Bipolar Transistor(IGBT)Board

Purchase Qty. / Reference FOB Price
1 piece US $
Production Capacity: 1123
Payment Terms:

Basic Info

  DS2001IBDG1A GE Insulated Gate Bipolar Transistor(IGBT)Board

  Model:DS2001IBDG1A

  Brand:GE

  Manufacturer:GE Boards&Turbine Control

  Series:Mark V DS200

  Product Description

  DS2001IBDG1A GE Insulated Gate Bipolar Transistor(IGBT)board is a transistor technology used for controlling and regulating current.

  feature

  High reliability and voltage withstand capability

  Low conduction and switching losses

  High switching speed

  The DS2001IBDG1A GE insulated gate bipolar transistor(IGBT)board is a highly reliable component used in power conversion and control applications.

  DS2001IBDG1A GE Insulated Gate Bipolar Transistor(IGBT)board is a high-performance power electronic component used to control and switch power equipment with different voltages and currents.

  application area

  DS2001IBDG1A GE insulated gate bipolar transistor(IGBT)board is widely used in industrial automation,transportation,renewable energy and other fields

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